FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
；
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
| Part Number | Inductance | Tolerance | Self-Resonant Frequency | DCR Max | Datasheet |
|---|---|---|---|---|---|
| FHW1210HCR91JGT | 910nH | 5% | 45 | 1.85 | |
| FHW1210HCR91GGT | 910nH | 2% | 45 | 1.85 | |
| FHW1008UCR91GGT | 910nH | 2% | 35 | 1.68 | |
| FHW1008UCR91KGT | 910nH | 10% | 35 | 1.68 | |
| FHW1008UCR91JGT | 910nH | 5% | 35 | 1.68 | |
| FHW1210HCR88KGT | 880nH | 10% | 45 | 1.85 | |
| FHW1210HCR88GGT | 880nH | 2% | 45 | 1.85 | |
| FHW1210HCR88JGT | 880nH | 5% | 45 | 1.85 | |
| FHW1210HCR82JGT | 820nH | 5% | 45 | 1.82 | |
| FHW1210HCR82GGT | 820nH | 2% | 45 | 1.82 | |
| FHW1210HCR82KGT | 820nH | 10% | 45 | 1.82 | |
| FHW1008UCR82KGT | 820nH | 10% | 45 | 1.61 | |
| FHW1008UCR82JGT | 820nH | 5% | 45 | 1.61 | |
| FHW1008UCR82GGT | 820nH | 2% | 45 | 1.61 | |
| FHW0805UCR82KGT | 820nH | 10% | 23 | 2.14 |