FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
；
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
| Part Number | Inductance | Tolerance | Self-Resonant Frequency | DCR Max | Datasheet |
|---|---|---|---|---|---|
| FHW1008UC3R0JGT | 3.0μH | 5% | 22 | 3.3 | |
| FHW1008UC3R0GGT | 3.0μH | 2% | 22 | 3.3 | |
| FHW1210HC2R7JGT | 2.7μH | 5% | 25 | 2.85 | |
| FHW1210HC2R7KGT | 2.7μH | 10% | 25 | 2.85 | |
| FHW1210HC2R7GGT | 2.7μH | 2% | 25 | 2.85 | |
| FHW1008UC2R7GGT | 2.7μH | 2% | 22 | 3.2 | |
| FHW1008UC2R7KGT | 2.7μH | 10% | 22 | 3.2 | |
| FHW1008UC2R7JGT | 2.7μH | 5% | 22 | 3.2 | |
| FHW1210HC2R6JGT | 2.6μH | 5% | 25 | 2.5 | |
| FHW1210HC2R6GGT | 2.6μH | 2% | 25 | 2.5 | |
| FHW1210HC2R6KGT | 2.6μH | 10% | 25 | 2.5 | |
| FHW1210HC2R2JGT | 2.2μH | 5% | 30 | 2.41 | |
| FHW1210HC2R2GGT | 2.2μH | 2% | 30 | 2.41 | |
| FHW1210HC2R2KGT | 2.2μH | 10% | 30 | 2.41 | |
| FHW1008UC2R2GGT | 2.2μH | 2% | 20 | 2.8 |